P-type layer for a III-nitride light emitting device
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United States of America Patent
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Mar 15, 2011
Grant Date -
Nov 15, 2007
app pub date -
May 15, 2006
filing date -
May 15, 2006
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Abstract
A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
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