Adaptive dynamic reading of flash memories
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United States of America Patent
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Mar 8, 2011
Grant Date -
Oct 23, 2008
app pub date -
Nov 18, 2007
filing date -
Apr 23, 2007
priority date (Note) -
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Abstract
Each of a plurality of flash memory cells is programmed to a respective one of L≧2 threshold voltage states within a threshold voltage window. Values of parameters of threshold voltage functions are adjusted in accordance with comparisons of the threshold voltages of some or all of the cells to two or more of m≧2 threshold voltage intervals within the threshold voltage window. Reference voltages for reading the cells are selected based on the values. Alternatively, the m threshold voltage intervals span the threshold voltage window, and respective threshold voltage states are assigned to the cells based on numbers of cells whose threshold voltages are in the intervals, without re-reading the cells.
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