Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates
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United States of America Patent
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Mar 8, 2011
Grant Date -
Sep 4, 2008
app pub date -
Nov 17, 2006
filing date -
Nov 17, 2005
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Abstract
One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.
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