Method for depositing high-quality microcrystalline semiconductor materials
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United States of America Patent
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Mar 8, 2011
Grant Date -
Jul 28, 2005
app pub date -
Jan 27, 2004
filing date -
Jan 27, 2004
priority date (Note) -
Expired
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Abstract
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
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