Low κ dielectric inorganic/organic hybrid films and method of making
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United States of America Patent
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Mar 8, 2011
Grant Date -
Apr 26, 2007
app pub date -
Nov 29, 2006
filing date -
Apr 28, 1998
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Abstract
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
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