Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
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United States of America Patent
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Mar 8, 2011
Grant Date -
Jul 24, 2008
app pub date -
Jan 24, 2007
filing date -
Jan 24, 2007
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Abstract
Cl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.
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