Multi-state memory

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United States of America Patent

PATENT NO 7898868
APP PUB NO 20090268518A1
SERIAL NO

12499581

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Abstract

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Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog techniques including A to D type conversion to reconstruct and process the data. In accordance with the teachings of this invention, the memory array is read with high fidelity, not to provide actual final digital data, but rather to provide raw data accurately reflecting the analog storage state, which information is sent to a memory controller for analysis and detection of the actual final digital data.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES LLC6900 DALLAS PARKWAY SUITE 325 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fong, Yupin Kawing Fremont, US 47 3649
Guterman, Daniel C Fremont, US 166 13852

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