Dual gate FinFET
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United States of America Patent
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Mar 1, 2011
Grant Date -
Dec 18, 2008
app pub date -
Jun 18, 2007
filing date -
Jun 18, 2007
priority date (Note) -
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Abstract
A circuit has a fin supported by a substrate. A source is formed at a first end of the fin and a drain is formed at a second end of the fin. A pair of independently accessible gates are laterally spaced along the fin between the source and the drain. Each gate is formed around approximately three sides of the fin.
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