Semiconductor device
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United States of America Patent
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Mar 1, 2011
Grant Date -
Dec 31, 2009
app pub date -
Jun 16, 2006
filing date -
Jun 17, 2005
priority date (Note) -
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Abstract
A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.
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