Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
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United States of America Patent
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Feb 15, 2011
Grant Date -
Feb 26, 2009
app pub date -
Apr 14, 2006
filing date -
Apr 15, 2005
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Abstract
There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
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