Silicon object forming method and apparatus
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United States of America Patent
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Feb 15, 2011
Grant Date -
Feb 14, 2008
app pub date -
Sep 21, 2006
filing date -
Sep 26, 2005
priority date (Note) -
Expired
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Abstract
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
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