Semiconductor device having polysilicon bit line contact
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United States of America Patent
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Feb 8, 2011
Grant Date -
Jul 2, 2009
app pub date -
Nov 19, 2008
filing date -
Dec 27, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a plurality of device isolation layers disposed in a semiconductor substrate, the device isolation layers extending in a word line direction and spaced apart from each other; a plurality of floating gate devices extending in a bit line direction perpendicular to the device isolation layer and spaced apart from each other; a source region and a drain region disposed at sides of the floating gate device; an insulation layer disposed on the floating gate device and the source region, and a polysilicon line extending in the word line direction and connected to the drain region.
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