Plasma producing method and apparatus as well as plasma processing apparatus
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United States of America Patent
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Feb 1, 2011
Grant Date -
May 3, 2007
app pub date -
Oct 26, 2006
filing date -
Oct 28, 2005
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Abstract
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
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