SRAM and method of controlling the SRAM

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United States of America Patent

PATENT NO 7876600
SERIAL NO

12272701

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.

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Patent Owner(s)

Patent OwnerAddress
AICESTAR TECHNOLOGY(SUZHOU) CORPORATIONC202/C302 NO 1355 JINJI LAKE AVENUE INTERNATIONAL SCIENCE & TECHNOLOGY PARK SOOCHOW CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yao, Qi-Shuang Jiangsu Province, CN 1 6
Zhang, Jin-Feng Jiangsu Province, CN 2 6
Zhang, Zhao-Yong Jiangsu Province, CN 5 10
Zheng, Jian-Bin Jiangsu Province, CN 1 6

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