Semiconductor device having schottky junction and method for manufacturing the same
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United States of America Patent
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Jan 25, 2011
Grant Date -
May 29, 2008
app pub date -
Nov 26, 2007
filing date -
Nov 24, 2006
priority date (Note) -
Expired
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Abstract
A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer includes a layer that contacts the Schottky electrode and contains AlGaN, InAlGaN or GaN. The Schottky electrode that contains indium includes one of an indium oxide layer and an indium tin oxide layer.
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