Spin-dependent tunnelling cell and method of formation thereof
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United States of America Patent
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Jan 11, 2011
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Sep 20, 2005
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Sep 20, 2005
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Abstract
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
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