Method for manufacturing a GaN based optical device
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United States of America Patent
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Jan 4, 2011
Grant Date -
Jun 29, 2006
app pub date -
Aug 21, 2004
filing date -
Sep 3, 2003
priority date (Note) -
Expired
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Abstract
and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
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