Composition for removing polymer residue of photosensitive etching-resistant layer
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United States of America Patent
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Dec 28, 2010
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N/A
app pub date -
Dec 19, 2006
filing date -
Dec 26, 2005
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Abstract
Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.
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