Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation
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United States of America Patent
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Dec 28, 2010
Grant Date -
Jul 16, 2009
app pub date -
Dec 31, 2008
filing date -
Jan 4, 2008
priority date (Note) -
Expired
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Abstract
Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.
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