SIC semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 21, 2010
Issued Date -
N/A
app pub date -
Apr 10, 2007
filing date -
Apr 11, 2006
priority date (Note) -
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Abstract
A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
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