Method of manufacturing a piezoelectric thin film device

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United States of America Patent

PATENT NO 7854049
SERIAL NO

11675677

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Abstract

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In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDNAGOYA-CITY AICHI 467-8530
NGK OPTOCERAMICS CO LTD434-3 AZA GOTANDA OOAZA SHIMOZUE KOMAKI-CITY AICHI-PREFECTURE 485-8557

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamajima, Akira Nagoya, JP 19 117
Iwata, Yuichi Nagoya, JP 42 189
Suzuki, Kengo Komaki, JP 93 530
Yamaguchi, Shoichiro Ichinomiya, JP 54 412
Yoshino, Takashi Ama-Gun, JP 121 1040

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