Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays
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United States of America Patent
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Nov 23, 2010
Grant Date -
Feb 14, 2008
app pub date -
Aug 8, 2006
filing date -
Aug 8, 2006
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Abstract
A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
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