Method for manufacturing a semiconductor device
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United States of America Patent
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Nov 23, 2010
Grant Date -
Jul 30, 2009
app pub date -
Apr 8, 2009
filing date -
Jun 2, 2005
priority date (Note) -
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Abstract
A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
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