Semiconductor power device
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United States of America Patent
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Nov 16, 2010
Issued Date -
N/A
app pub date -
Jul 16, 2007
filing date -
Jan 10, 2007
priority date (Note) -
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Abstract
In one embodiment the present invention includes a semiconductor power device. The semiconductor power device includes a single gauge lead frame, a semiconductor die, and a heat sink. The semiconductor die is attached to a first level of the lead frame. The heat sink is attached to a second level of the lead frame. A molding compound encapsulates the semiconductor die and a portion of the lead frame, such that a portion of the heat sink is outside of the molding compound. The resulting device may be efficiently manufactured as compared to dual gauge lead frame devices or devices where the semiconductor die is not attached to the lead frame.
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