Photoresist residue remover composition and semiconductor circuit element production process employing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 19, 2010
Grant Date -
Dec 25, 2008
app pub date -
Apr 8, 2008
filing date -
Dec 9, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
First Claim
Other Claims data not available
