Semiconductor device having electrode and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Oct 19, 2010
Grant Date -
Jun 24, 2010
app pub date -
Mar 8, 2010
filing date -
Jan 4, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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RENESAS TECHNOLOGY CORP | TOKYO JAPAN TOKYO METROPOLIS |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ashida, Motoi | Tokyo, JP | 30 | 336 |
# of filed Patents : 30 Total Citations : 336 | |||
Koga, Tsuyoshi | Tokyo, JP | 19 | 94 |
# of filed Patents : 19 Total Citations : 94 | |||
Okada, Daisuke | Tokyo, JP | 87 | 631 |
# of filed Patents : 87 Total Citations : 631 | |||
Okazaki, Tsutomu | Tokyo, JP | 40 | 447 |
# of filed Patents : 40 Total Citations : 447 | |||
Ozaki, Hiroji | Tokyo, JP | 42 | 791 |
# of filed Patents : 42 Total Citations : 791 |
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- 15 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

Legal Events
Date | Code | Event | Description |
---|---|---|---|
Oct 26, 2015 | STCH | INFORMATION ON STATUS: PATENT DISCONTINUATION | free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
Sep 25, 2015 | FP | LAPSED DUE TO FAILURE TO PAY MAINTENANCE FEE | Effective Date: Sep 25, 2015 |
Sep 25, 2015 | LAPS | LAPSE FOR FAILURE TO PAY MAINTENANCE FEES | |
May 08, 2015 | REMI | MAINTENANCE FEE REMINDER MAILED | |
Feb 24, 2011 | FPAY | FEE PAYMENT | year of fee payment: 4 |
Sep 25, 2007 | I | Issuance | |
Sep 08, 2005 | P | Published | |
Dec 16, 2004 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIRIYAMA, HIROMITSU;YAMAKAWA, KOICHI;REEL/FRAME:016140/0408 Owner name: JAPAN ATOMIC ENERGY RESEARCH INSTITUTE, JAPAN Effective Date: Dec 16, 2004 |
Aug 27, 2004 | F | Filing | |
Mar 04, 2004 | PD | Priority Date |

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