Semiconductor device having electrode and manufacturing method thereof

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United States of America Patent

PATENT NO 7816207
APP PUB NO 20100159687A1
SERIAL NO

12719524

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Abstract

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A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

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Patent Owner(s)

Patent OwnerAddress
RENESAS TECHNOLOGY CORPTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ashida, Motoi Tokyo, JP 30 336
Koga, Tsuyoshi Tokyo, JP 19 94
Okada, Daisuke Tokyo, JP 87 631
Okazaki, Tsutomu Tokyo, JP 40 447
Ozaki, Hiroji Tokyo, JP 42 791

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