Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal

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United States of America Patent

PATENT NO 7815733
APP PUB NO 20080011224A1
SERIAL NO

11837557

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDNAGOYA CITY AICHI PREF 467-8530
MORI YUSUKE8-16-9 KISAICHI KATANO-SHI OSAKA 576-0033

International Classification(s)

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  • 2007 Application Filing Year
  • C30B Class
  • 274 Applications Filed
  • 185 Patents Issued To-Date
  • 67.52 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2007200820092010201120122013201420152016201720180255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imai, Katsuhiro Nagoya, JP 89 314
Isobe, Hiroaki Taki-Gun, JP 18 85
Iwai, Makoto Kasugai, JP 118 504
Kawahara, Minoru Saitama, JP 45 371
Kawamura, Fumio Minoh, JP 87 965
Sasaki, Takatomo Minoh, JP 64 492

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Patent Citation Ranking

  • 3 Citation Count
  • C30B Class
  • 7.81 % this patent is cited more than
  • 15 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1074209431411101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7081 - 9091 - 100100 +05101520253035404550556065707580

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