Semiconductor device and a method of manufacture therefor
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United States of America Patent
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Oct 12, 2010
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app pub date -
Jun 27, 2005
filing date -
Feb 13, 2004
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Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a substrate, and a graded capping layer located over the substrate, wherein the graded capping layer includes at least two different layers, wherein first and second layers of the at least two different layers have different stress values.
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