Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation
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United States of America Patent
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Oct 12, 2010
Grant Date -
May 13, 2010
app pub date -
May 22, 2008
filing date -
May 24, 2007
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Abstract
The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.
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