Semiconductor optical device and manufacturing method thereof

United States of America Patent

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Sep 28, 2010
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Oct 2, 2008
app pub date
Mar 21, 2008
filing date
Mar 28, 2007

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Expired

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Abstract

. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.

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Patent Owner(s)

Patent Owner	Address
FUJITSU LIMITED	KAWASAKI-SHI KANAGAWA 211-8588
EUDYNA DEVICES INC	YAMANASHI PREFECTURE YAMANASHI

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H01S:DEVICES USING STIMULATED EMISSION

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Inventor Name	Address	# of filed Patents	Total Citations
Ekawa, Mitsuru	Kawasaki, JP	14	141
Takada, Kan	Kawasaki, JP	9	35
Takeuchi, Tatsuya	Yamanashi, JP	21	187
Yamamoto, Tsuyoshi	Kawasaki, JP	324	4081

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Semiconductor optical device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

12053213

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PATENT NO	7804870
APP PUB NO	20080240191A1
SERIAL NO	12053213
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
September 28, 2010	US,7804870,B2 US7804870B2	GRANTED PATENT AS SECOND PUBLICATION
October 02, 2008	US,20080240191,A1 US20080240191A1	FIRST PUBLISHED PATENT APPLICATION

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