Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 28, 2010
Grant Date -
Aug 7, 2008
app pub date -
Feb 1, 2008
filing date -
Feb 2, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully