Process for producing siox particles

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United States of America Patent

PATENT NO 7803340
SERIAL NO

11663586

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Abstract

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Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.

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Patent Owner(s)

Patent OwnerAddress
DENKI KAGAKU KOGYO KABUSHIKI KAISHATOKYO TOKYO METROPOLIS
THE UNIVERSITY OF ELECTRO-COMMUNICATIONS1-5-1 CHOFUGAOKA CHOFU-SHI TOKYO 1828585 ?1828585

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ibukiyama, Masahiro Machida, JP 14 190
Kawasaki, Takashi Machida, JP 179 1423
Morisaki, Hiroshi Chofu, JP 55 430
Nozaki, Shinji Chofu, JP 84 1176
Uchida, Kazuo Chofu, JP 41 347

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