Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
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United States of America Patent
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Sep 21, 2010
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app pub date -
Jun 11, 2008
filing date -
Jun 12, 2007
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Abstract
T is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
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