Semiconductor laser diode
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United States of America Patent
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Sep 14, 2010
Grant Date -
Mar 29, 2007
app pub date -
Sep 22, 2006
filing date -
Sep 29, 2005
priority date (Note) -
Expired
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Abstract
A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.
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