Method of fabricating metal interconnects and inter-metal dielectric layer thereof
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United States of America Patent
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Sep 14, 2010
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Mar 12, 2007
filing date -
Dec 15, 2006
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Abstract
A method of fabricating metal interconnects and an inter-metal dielectric layer thereof. A first metal interconnect pattern and a second metal interconnect pattern disposed thereon are formed on a substrate by plating processes. Subsequently, an inter-metal dielectric layer is formed on the substrate, the first metal interconnect pattern and the second metal interconnect pattern. The inter-metal dielectric layer is then planarized and the second metal interconnect pattern is exposed.
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