Pass through via technology for use during the manufacture of a semiconductor device
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United States of America Patent
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Sep 7, 2010
Grant Date -
Aug 6, 2009
app pub date -
Mar 3, 2009
filing date -
Aug 24, 2004
priority date (Note) -
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Abstract
Via structures are described which pass through a semiconductor substrate assembly such as a semiconductor die or wafer and allows for two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer.
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