Production of semiconductor substrates with buried layers by joining (bonding) semiconductor wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 7, 2010
Grant Date -
Feb 14, 2008
app pub date -
Nov 29, 2004
filing date -
Nov 28, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention relates to a method for producing semiconductor substrates by bonding. The aim of said method is to reduce the non-usable edge region on the bonded wafer component and to improve the edge geometry of the wafer composite. This is achieved by a method for joining two semiconductor wafers using a semiconductor wafer bonding process. The surfaces of the two semiconductor wafers that are to be bonded are provided with a border or edge geometry that has a special short front-end facet. After the bonding process, one of the two wafers is ablated to obtain an edge region that is as devoid as possible of defects and a usable wafer surface that is as large as possible.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully