R-Fe-B based thin film magnet and method for preparation thereof
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United States of America Patent
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Sep 7, 2010
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Mar 23, 2005
filing date -
Mar 23, 2004
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Abstract
B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.
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