Semiconductor optoelectronic waveguide
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United States of America Patent
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Aug 31, 2010
Grant Date -
Dec 11, 2008
app pub date -
Jul 15, 2008
filing date -
Oct 3, 2003
priority date (Note) -
Expired
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Abstract
. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.
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