Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode
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United States of America Patent
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Aug 24, 2010
Grant Date -
Aug 20, 2009
app pub date -
Apr 23, 2009
filing date -
Feb 23, 2006
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Abstract
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.
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