Semiconductor device having damascene interconnection structure that prevents void formation between interconnections

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United States of America Patent

PATENT NO 7777337
APP PUB NO 20030183942A1
SERIAL NO

10397369

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Abstract

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A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

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Patent Owner(s)

Patent OwnerAddress
LAPIS SEMICONDUCTOR CO LTD2-4-8 SHINYOKOHAMA KOUHOKU-KU YOKOHAMA-SHI KANAGAWA 222-8575

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Yusuke Tokyo, JP 35 616

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  • 2 Citation Count
  • H01L Class
  • 2.46 % this patent is cited more than
  • 15 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges10417069704922861911147665453015101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0100200300400500600700800900100011001200130014001500160017001800

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