Method for fabricating a semiconductor on insulator wafer
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United States of America Patent
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Aug 17, 2010
Grant Date -
Dec 13, 2007
app pub date -
May 9, 2007
filing date -
May 18, 2006
priority date (Note) -
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Abstract
A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.
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