Method and apparatus for forming crystalline portions of semiconductor film
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United States of America Patent
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Aug 17, 2010
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app pub date -
Oct 3, 2007
filing date -
Mar 28, 2003
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Abstract
A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value α (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2≦value α≦0.8.
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