Optical semiconductor devices on InP substrate

United States of America Patent

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Aug 10, 2010
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Mar 8, 2007
app pub date
Aug 8, 2006
filing date
Sep 5, 2005

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Abstract

is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime.has been only conventionally obtained.

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Patent Owner(s)

Patent Owner	Address
SONY CORPORATION	1-7-1 KONAN MINATO-KU TOKYO
HITACHI LTD	6-6 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8280
SOPHIA SCHOOL CORPORATION	TOKYO 102-8554

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Kishino, Katsumi	Tokyo, JP	46	252
Nakamura, Hitoshi	Hachioji, JP	260	2790
Nomura, Ichiro	Tokyo, JP	103	2095
Tamamura, Koshi	Tokyo, JP	27	276

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Optical semiconductor devices on InP substrate

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United States of America Patent

11500292

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PATENT NO	7772586
APP PUB NO	20070051937A1
SERIAL NO	11500292
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
August 10, 2010	US,7772586,B2 US7772586B2	GRANTED PATENT AS SECOND PUBLICATION
March 08, 2007	US,20070051937,A1 US20070051937A1	FIRST PUBLISHED PATENT APPLICATION

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