Shallow semiconductor sensor with fluorescent molecule layer that eliminates optical and electronic crosstalk
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United States of America Patent
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Aug 3, 2010
Grant Date -
Dec 6, 2007
app pub date -
May 31, 2006
filing date -
May 31, 2006
priority date (Note) -
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Abstract
A semiconductor sensor including a plurality of pixels, each of which includes a fluorescent molecule layer and a photosensitive layer. The fluorescent molecule layer converts light incident on the pixel to surface plasmons. The photosensitive layer generates a light detection signal representative of an intensity of light incident on the pixel in response to the surface plasmons in a region of the sensor which is close enough to the surface of the pixels that electronic crosstalk between the pixels does not occur.
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