Method of programming a non-volatile memory
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United States of America Patent
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Jul 27, 2010
Grant Date -
May 27, 2010
app pub date -
Nov 25, 2008
filing date -
Nov 25, 2008
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Abstract
A memory system including non-volatile memory cells. The memory system includes program circuitry that programs cells to a first threshold voltage or a second threshold voltage based on the number of times that cells of the memory system have been erased. In one embodiment, the threshold voltage is reduced when any set of cells of the memory system have been erased a specific number of times.
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