Metal wiring and method for forming the same
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United States of America Patent
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Jul 27, 2010
Grant Date -
Mar 6, 2008
app pub date -
Aug 29, 2007
filing date -
Aug 29, 2006
priority date (Note) -
Expired
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Abstract
A metal wiring and method for forming the same are provided. A first conductive layer is formed on a semiconductor substrate, and an insulating layer is formed on the first conductive layer. A via and a trench are formed in the insulating layer, and a second conductive layer is formed by burying metal in the via and the trench. The insulating layer also includes materials with a low dielectric constant filled in second vias.
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