Methods of forming semiconductor devices using embedded L-shape spacers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 20, 2010
Grant Date -
May 31, 2007
app pub date -
Nov 29, 2005
filing date -
Nov 29, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a semiconductor device that embeds an L-shaped spacer is provided. The method includes defining an L-shaped spacer on each side of a gate region of a substrate and embedding the L-shaped spacers in an oxide layer so that the oxide layer extends over a portion of the substrate a predetermined distance from a lateral edge of the L-shaped spacer. And removing oxide layers to expose the L-shape spacers.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully