Semiconductor device including capacitor and method of fabricating same

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United States of America Patent

PATENT NO 7759192
SERIAL NO

11258619

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Abstract

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layer and the contact plug makes a contact with the doped polysilicon layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Jae-Young Gyeonggi-do, KR 115 4363
Kim, Hee-Seok Gyeonggi-do, KR 18 500
Kim, Hong-Suk Gyeonggi-do, KR 31 795
Kim, Jin-Gyun Gyeonggi-do, KR 51 1400
Lee, Sung-Hae Gyeonggi-do, KR 19 1100
Lim, Ju-Wan Seoul, KR 9 640
Noh, Jin-Tae Gyeonggi-do, KR 16 1128
Yang, Sang-Ryol Gyeonggi-do, KR 22 923

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