Metal plating using seed film
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United States of America Patent
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Jul 20, 2010
Grant Date -
Apr 5, 2007
app pub date -
Nov 21, 2006
filing date -
Aug 29, 2002
priority date (Note) -
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Abstract
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal layers is no greater than a monolayer. The seed film also includes either one or more conductive metal oxide layers or one or more silicon oxide layers, where either layer is no greater than a monolayer. The seed film can be used in plating, including electroplating, conductive layers, over at least a portion of the seed film. Conductive layers formed with the seed film can be used in fabricating an integrated circuit, including fabricating capacitor structures in the integrated circuit.
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